The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium
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The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and gamma-radiation. Change of the samples specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region) with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation.
Кључне речи:
neutron radiation / X-radiation / gamma radiation / silicon / germanium / radiation effects / Monte-Carlo methodИзвор:
Nuclear technology and radiation protection, 2016, 31, 1, 97-101Финансирање / пројекти:
- Физички и функционални ефекти интеракције зрачења са електротехничким и биолошким системима (RS-171007)
DOI: 10.2298/NTRP1601097O
ISSN: 1451-3994
WoS: 000375638000010
Scopus: 2-s2.0-84965006795
Колекције
Институција/група
VinčaTY - JOUR AU - Obrenović, Marija D. AU - Lazarević, Đorđe R. AU - Stanković, Srboljub J. AU - Kartalović, Nenad M. PY - 2016 UR - https://vinar.vin.bg.ac.rs/handle/123456789/1065 AB - The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and gamma-radiation. Change of the samples specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region) with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation. T2 - Nuclear technology and radiation protection T1 - The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium VL - 31 IS - 1 SP - 97 EP - 101 DO - 10.2298/NTRP1601097O ER -
@article{ author = "Obrenović, Marija D. and Lazarević, Đorđe R. and Stanković, Srboljub J. and Kartalović, Nenad M.", year = "2016", abstract = "The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and gamma-radiation. Change of the samples specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region) with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation.", journal = "Nuclear technology and radiation protection", title = "The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium", volume = "31", number = "1", pages = "97-101", doi = "10.2298/NTRP1601097O" }
Obrenović, M. D., Lazarević, Đ. R., Stanković, S. J.,& Kartalović, N. M.. (2016). The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium. in Nuclear technology and radiation protection, 31(1), 97-101. https://doi.org/10.2298/NTRP1601097O
Obrenović MD, Lazarević ĐR, Stanković SJ, Kartalović NM. The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium. in Nuclear technology and radiation protection. 2016;31(1):97-101. doi:10.2298/NTRP1601097O .
Obrenović, Marija D., Lazarević, Đorđe R., Stanković, Srboljub J., Kartalović, Nenad M., "The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium" in Nuclear technology and radiation protection, 31, no. 1 (2016):97-101, https://doi.org/10.2298/NTRP1601097O . .
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