The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium
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The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and gamma-radiation. Change of the samples specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region) with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation.
Кључне речи:neutron radiation / X-radiation / gamma radiation / silicon / germanium / radiation effects / Monte-Carlo method
Извор:Nuclear technology and radiation protection, 2016, 31, 1, 97-101
- Физички и функционални ефекти интеракције зрачења са електротехничким и биолошким системима (RS-171007)
ISSN: 1451-3994 (print)
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