Tiling the Silicon for Added Functionality: PLD Growth of Highly Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface
Аутори
Jovanović, Zoran M.Trstenjak, Urška
Ho, Hsin-Chia
Butsyk, Olena
Chen, Binbin
Tchernychova, Elena
Borodavka, Fedir
Koster, Gertjan
Hlinka, Jiří
Spreitzer, Matjaž
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The application of two-dimensional (2D) materials
has alleviated a number of challenges of traditional epitaxy and
pushed forward the integration of dissimilar materials. Besides
acting as a seed layer for van der Waals epitaxy, the 2D materials�
being atom(s) thick�have also enabled wetting transparency in
which the potential field of the substrate, although partially
screened, is still capable of imposing epitaxial overgrowth. One of
the crucial steps in this technology is the preservation of the quality
of 2D materials during and after their transfer to a substrate of
interest. In the present study, we show that by honing the
achievements of traditional epitaxy and wet chemistry a hybrid
approach can be devised that offers a unique perspective for the
integration of functional oxides with a silicon platform. It is based
on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus
simultaneously allowing bo...th direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). Given that the quality of the films grown
on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this
approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.
Кључне речи:
PLD deposition / rGO buffer layer / epitaxy / STO pseudo-substrate / added functionality / PZTИзвор:
ACS Applied Materials and Interfaces, 2023, 15, 6058-6068Финансирање / пројекти:
- Slovenian Research Agency [Project Nos. N2-0187, P2-0091, and N2-0176]
- Ministry of Science, Technological Development and Innovations of the Republic of Serbia and the Czech Science Foundation [Project No. 21-20110K]
Колекције
Институција/група
VinčaTY - JOUR AU - Jovanović, Zoran M. AU - Trstenjak, Urška AU - Ho, Hsin-Chia AU - Butsyk, Olena AU - Chen, Binbin AU - Tchernychova, Elena AU - Borodavka, Fedir AU - Koster, Gertjan AU - Hlinka, Jiří AU - Spreitzer, Matjaž PY - 2023 UR - https://vinar.vin.bg.ac.rs/handle/123456789/10623 AB - The application of two-dimensional (2D) materials has alleviated a number of challenges of traditional epitaxy and pushed forward the integration of dissimilar materials. Besides acting as a seed layer for van der Waals epitaxy, the 2D materials� being atom(s) thick�have also enabled wetting transparency in which the potential field of the substrate, although partially screened, is still capable of imposing epitaxial overgrowth. One of the crucial steps in this technology is the preservation of the quality of 2D materials during and after their transfer to a substrate of interest. In the present study, we show that by honing the achievements of traditional epitaxy and wet chemistry a hybrid approach can be devised that offers a unique perspective for the integration of functional oxides with a silicon platform. It is based on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). Given that the quality of the films grown on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems. T2 - ACS Applied Materials and Interfaces T1 - Tiling the Silicon for Added Functionality: PLD Growth of Highly Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface VL - 15 SP - 6058 EP - 6068 DO - 10.1021/acsami.2c17351 ER -
@article{ author = "Jovanović, Zoran M. and Trstenjak, Urška and Ho, Hsin-Chia and Butsyk, Olena and Chen, Binbin and Tchernychova, Elena and Borodavka, Fedir and Koster, Gertjan and Hlinka, Jiří and Spreitzer, Matjaž", year = "2023", abstract = "The application of two-dimensional (2D) materials has alleviated a number of challenges of traditional epitaxy and pushed forward the integration of dissimilar materials. Besides acting as a seed layer for van der Waals epitaxy, the 2D materials� being atom(s) thick�have also enabled wetting transparency in which the potential field of the substrate, although partially screened, is still capable of imposing epitaxial overgrowth. One of the crucial steps in this technology is the preservation of the quality of 2D materials during and after their transfer to a substrate of interest. In the present study, we show that by honing the achievements of traditional epitaxy and wet chemistry a hybrid approach can be devised that offers a unique perspective for the integration of functional oxides with a silicon platform. It is based on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). Given that the quality of the films grown on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.", journal = "ACS Applied Materials and Interfaces", title = "Tiling the Silicon for Added Functionality: PLD Growth of Highly Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface", volume = "15", pages = "6058-6068", doi = "10.1021/acsami.2c17351" }
Jovanović, Z. M., Trstenjak, U., Ho, H., Butsyk, O., Chen, B., Tchernychova, E., Borodavka, F., Koster, G., Hlinka, J.,& Spreitzer, M.. (2023). Tiling the Silicon for Added Functionality: PLD Growth of Highly Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface. in ACS Applied Materials and Interfaces, 15, 6058-6068. https://doi.org/10.1021/acsami.2c17351
Jovanović ZM, Trstenjak U, Ho H, Butsyk O, Chen B, Tchernychova E, Borodavka F, Koster G, Hlinka J, Spreitzer M. Tiling the Silicon for Added Functionality: PLD Growth of Highly Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface. in ACS Applied Materials and Interfaces. 2023;15:6058-6068. doi:10.1021/acsami.2c17351 .
Jovanović, Zoran M., Trstenjak, Urška, Ho, Hsin-Chia, Butsyk, Olena, Chen, Binbin, Tchernychova, Elena, Borodavka, Fedir, Koster, Gertjan, Hlinka, Jiří, Spreitzer, Matjaž, "Tiling the Silicon for Added Functionality: PLD Growth of Highly Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface" in ACS Applied Materials and Interfaces, 15 (2023):6058-6068, https://doi.org/10.1021/acsami.2c17351 . .