Electronic characterization of plasma-thick n-type silicon using neural networks and photoacoustic response
Само за регистроване кориснике
2022
Аутори
Đorđević, Katarina Lj.Galović, Slobodanka
Ćojbašić, Žarko М.
Markushev, Dragan D.
Markushev, Dragana K.
Aleksić, Sanja M.
Pantić, Damjan S.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In this paper, electronic semiconductor characterization using reverse-back procedure was applied to different photoacoustic responses aiming to find effective ambipolar diffusion coefficient and a bulk lifetime of the minority carriers. The main idea was to find the small fluctuations in investigated parameters due to detecting possible unwanted sample contaminations and temperature variations during the measurements. The mentioned procedure was based on the application of neural networks. Knowing that in experiments the contaminated surfaces of the sample can play a significant role in the global recombination process that we are measuring and that the unintentionally introduced defects of the sample crystal lattice could vary the carrier lifetime by several orders of magnitude, a method of PA signal adjustment by the reverse-back procedure is developed, based on the changes of the carrier electronic parameters.
Кључне речи:
Artificial neural networks / Carrier lifetime / Coefficient of ambipolar diffusion / Inverse problem / n-type silicon / Photoacoustic / Reverse-back procedure / SemiconductorsИзвор:
Optical and Quantum Electronics, 2022, 54, 8, 485-Финансирање / пројекти:
- Министарство науке, технолошког развоја и иновација Републике Србије, институционално финансирање - 200017 (Универзитет у Београду, Институт за нуклеарне науке Винча, Београд-Винча) (RS-MESTD-inst-2020-200017)
DOI: 10.1007/s11082-022-03808-3
ISSN: 1572-817X
WoS: 000818809700003
Scopus: 2-s2.0-85133268553
Колекције
Институција/група
VinčaTY - JOUR AU - Đorđević, Katarina Lj. AU - Galović, Slobodanka AU - Ćojbašić, Žarko М. AU - Markushev, Dragan D. AU - Markushev, Dragana K. AU - Aleksić, Sanja M. AU - Pantić, Damjan S. PY - 2022 UR - https://vinar.vin.bg.ac.rs/handle/123456789/10349 AB - In this paper, electronic semiconductor characterization using reverse-back procedure was applied to different photoacoustic responses aiming to find effective ambipolar diffusion coefficient and a bulk lifetime of the minority carriers. The main idea was to find the small fluctuations in investigated parameters due to detecting possible unwanted sample contaminations and temperature variations during the measurements. The mentioned procedure was based on the application of neural networks. Knowing that in experiments the contaminated surfaces of the sample can play a significant role in the global recombination process that we are measuring and that the unintentionally introduced defects of the sample crystal lattice could vary the carrier lifetime by several orders of magnitude, a method of PA signal adjustment by the reverse-back procedure is developed, based on the changes of the carrier electronic parameters. T2 - Optical and Quantum Electronics T1 - Electronic characterization of plasma-thick n-type silicon using neural networks and photoacoustic response VL - 54 IS - 8 SP - 485 DO - 10.1007/s11082-022-03808-3 ER -
@article{ author = "Đorđević, Katarina Lj. and Galović, Slobodanka and Ćojbašić, Žarko М. and Markushev, Dragan D. and Markushev, Dragana K. and Aleksić, Sanja M. and Pantić, Damjan S.", year = "2022", abstract = "In this paper, electronic semiconductor characterization using reverse-back procedure was applied to different photoacoustic responses aiming to find effective ambipolar diffusion coefficient and a bulk lifetime of the minority carriers. The main idea was to find the small fluctuations in investigated parameters due to detecting possible unwanted sample contaminations and temperature variations during the measurements. The mentioned procedure was based on the application of neural networks. Knowing that in experiments the contaminated surfaces of the sample can play a significant role in the global recombination process that we are measuring and that the unintentionally introduced defects of the sample crystal lattice could vary the carrier lifetime by several orders of magnitude, a method of PA signal adjustment by the reverse-back procedure is developed, based on the changes of the carrier electronic parameters.", journal = "Optical and Quantum Electronics", title = "Electronic characterization of plasma-thick n-type silicon using neural networks and photoacoustic response", volume = "54", number = "8", pages = "485", doi = "10.1007/s11082-022-03808-3" }
Đorđević, K. Lj., Galović, S., Ćojbašić, Ž. М., Markushev, D. D., Markushev, D. K., Aleksić, S. M.,& Pantić, D. S.. (2022). Electronic characterization of plasma-thick n-type silicon using neural networks and photoacoustic response. in Optical and Quantum Electronics, 54(8), 485. https://doi.org/10.1007/s11082-022-03808-3
Đorđević KL, Galović S, Ćojbašić ŽМ, Markushev DD, Markushev DK, Aleksić SM, Pantić DS. Electronic characterization of plasma-thick n-type silicon using neural networks and photoacoustic response. in Optical and Quantum Electronics. 2022;54(8):485. doi:10.1007/s11082-022-03808-3 .
Đorđević, Katarina Lj., Galović, Slobodanka, Ćojbašić, Žarko М., Markushev, Dragan D., Markushev, Dragana K., Aleksić, Sanja M., Pantić, Damjan S., "Electronic characterization of plasma-thick n-type silicon using neural networks and photoacoustic response" in Optical and Quantum Electronics, 54, no. 8 (2022):485, https://doi.org/10.1007/s11082-022-03808-3 . .