Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors
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2021
Authors
Ilić, StefanAnđelković, Marko S.
Carvajal, Miguel A.
Lallena, Antonio M.
Krstić, Miloš
Stanković, Srboljub
Ristić, Goran S.
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In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate....
Keywords:
Power measurement / Radiation effects / Schottky diodes / Semiconductor device measurement / Sensitivity / Silicon carbide / Voltage measurementSource:
MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings, 2021, 337-340Funding / projects:
- Ministry of Science, Technological Development and Innovation of the Republic of Serbia, institutional funding - 200026 (University of Belgrade, Institute of Chemistry, Technology and Metallurgy - IChTM) (RS-MESTD-inst-2020-200026)
- Joint research of measurements and effects of ionizing and UV radiation in medicine and environmental protection (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-43011)
- European Commission [857558 - ELICSIR, WIDESPREAD-2018-3-TWINNING]
DOI: 10.1109/MIEL52794.2021.9569076
ISBN: 978-1-6654-4528-3
ISSN: 2159-1660
Scopus: 2-s2.0-85118457713
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VinčaTY - CONF AU - Ilić, Stefan AU - Anđelković, Marko S. AU - Carvajal, Miguel A. AU - Lallena, Antonio M. AU - Krstić, Miloš AU - Stanković, Srboljub AU - Ristić, Goran S. PY - 2021 UR - https://vinar.vin.bg.ac.rs/handle/123456789/10020 AB - In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate. C3 - MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings T1 - Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors SP - 337 EP - 340 DO - 10.1109/MIEL52794.2021.9569076 ER -
@conference{ author = "Ilić, Stefan and Anđelković, Marko S. and Carvajal, Miguel A. and Lallena, Antonio M. and Krstić, Miloš and Stanković, Srboljub and Ristić, Goran S.", year = "2021", abstract = "In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.", journal = "MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings", title = "Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors", pages = "337-340", doi = "10.1109/MIEL52794.2021.9569076" }
Ilić, S., Anđelković, M. S., Carvajal, M. A., Lallena, A. M., Krstić, M., Stanković, S.,& Ristić, G. S.. (2021). Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors. in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings, 337-340. https://doi.org/10.1109/MIEL52794.2021.9569076
Ilić S, Anđelković MS, Carvajal MA, Lallena AM, Krstić M, Stanković S, Ristić GS. Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors. in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings. 2021;:337-340. doi:10.1109/MIEL52794.2021.9569076 .
Ilić, Stefan, Anđelković, Marko S., Carvajal, Miguel A., Lallena, Antonio M., Krstić, Miloš, Stanković, Srboljub, Ristić, Goran S., "Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors" in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings (2021):337-340, https://doi.org/10.1109/MIEL52794.2021.9569076 . .