Jelic, G

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Design of the channel for irradiation of materials with highly charged ion beams obtained from the mVINIS ion source

Šiljegović, Milorad; Dobrosavljević, Aleksandar S.; Draganic, I; Cizmic, B; Jelic, G

(2006)

TY  - JOUR
AU  - Šiljegović, Milorad
AU  - Dobrosavljević, Aleksandar S.
AU  - Draganic, I
AU  - Cizmic, B
AU  - Jelic, G
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6576
AB  - The low-energy part of the TESLA Accelerator Installation comprises an electron cyclotron resonance ion source (the mVINIS ion source) and the channel for modification of materials (L3A). The L3A channel is long and has low beam transmission (30%-50%), so it is not suitable for high fluence implantations (over 10(16) cm(-2)). Therefore, we are planning to introduce an experimental channel (L4), close to the mVINIS Ion Source, where we shall be able to achieve high beam currents on the target and, consequently, irradiation of materials to high fluences. During the ion implantation, we shall be able to measure fluence rate, achieve uniform fluence distribution by a mechanism for x and y sample movements, and control the sample temperature in the range of 0-200 degrees C. (c) 2006 American Institute of Physics.
T2  - Review of Scientific Instruments
T1  - Design of the channel for irradiation of materials with highly charged ion beams obtained from the mVINIS ion source
VL  - 77
IS  - 3
DO  - 10.1063/1.2163331
ER  - 
@article{
author = "Šiljegović, Milorad and Dobrosavljević, Aleksandar S. and Draganic, I and Cizmic, B and Jelic, G",
year = "2006",
abstract = "The low-energy part of the TESLA Accelerator Installation comprises an electron cyclotron resonance ion source (the mVINIS ion source) and the channel for modification of materials (L3A). The L3A channel is long and has low beam transmission (30%-50%), so it is not suitable for high fluence implantations (over 10(16) cm(-2)). Therefore, we are planning to introduce an experimental channel (L4), close to the mVINIS Ion Source, where we shall be able to achieve high beam currents on the target and, consequently, irradiation of materials to high fluences. During the ion implantation, we shall be able to measure fluence rate, achieve uniform fluence distribution by a mechanism for x and y sample movements, and control the sample temperature in the range of 0-200 degrees C. (c) 2006 American Institute of Physics.",
journal = "Review of Scientific Instruments",
title = "Design of the channel for irradiation of materials with highly charged ion beams obtained from the mVINIS ion source",
volume = "77",
number = "3",
doi = "10.1063/1.2163331"
}
Šiljegović, M., Dobrosavljević, A. S., Draganic, I., Cizmic, B.,& Jelic, G.. (2006). Design of the channel for irradiation of materials with highly charged ion beams obtained from the mVINIS ion source. in Review of Scientific Instruments, 77(3).
https://doi.org/10.1063/1.2163331
Šiljegović M, Dobrosavljević AS, Draganic I, Cizmic B, Jelic G. Design of the channel for irradiation of materials with highly charged ion beams obtained from the mVINIS ion source. in Review of Scientific Instruments. 2006;77(3).
doi:10.1063/1.2163331 .
Šiljegović, Milorad, Dobrosavljević, Aleksandar S., Draganic, I, Cizmic, B, Jelic, G, "Design of the channel for irradiation of materials with highly charged ion beams obtained from the mVINIS ion source" in Review of Scientific Instruments, 77, no. 3 (2006),
https://doi.org/10.1063/1.2163331 . .
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