TY  - CONF
AU  - Lazarević, Đorđe R.
AU  - Dolicanin, Edin
AU  - Iricanin, Bratislav
AU  - Vujisić, Miloš Lj.
AU  - Stanković, Koviljka
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7009
AB  - Cooper-pair insulators are materials that exhibit superconducting behavior, but under specific conditions, regarding film thickness, bias voltage, applied magnetic field, and presence of magnetic impurities, act as insulators with thermally activated Cooper pairs as charge carriers. This paper investigates possible radiation effects in thin films of such materials. Radiation effects are predicted on the basis of Monte Carlo simulations, using 2D Josephson junction array as a model of material structure. Results of a combined theoretical and numerical analysis suggest that radiation-induced change of the Josephson junction charging energy could significantly affect the current-voltage characteristics of a Cooper-pair insulator, and that a transition to a metallic state is possible, due to radiation-induced disruption of the fine-tuned granular structure. The breaking of Cooper pairs, caused by incident and displaced ions, can also destroy the conditions for this specific insulating state to exist.
T1  - Radiation Effects in Cooper Pair Insulating Thin Films
SP  - 1165
EP  - 1168
UR  - https://hdl.handle.net/21.15107/rcub_vinar_7009
ER  - 

@conference{
author = "Lazarević, Đorđe R. and Dolicanin, Edin and Iricanin, Bratislav and Vujisić, Miloš Lj. and Stanković, Koviljka",
year = "2012",
abstract = "Cooper-pair insulators are materials that exhibit superconducting behavior, but under specific conditions, regarding film thickness, bias voltage, applied magnetic field, and presence of magnetic impurities, act as insulators with thermally activated Cooper pairs as charge carriers. This paper investigates possible radiation effects in thin films of such materials. Radiation effects are predicted on the basis of Monte Carlo simulations, using 2D Josephson junction array as a model of material structure. Results of a combined theoretical and numerical analysis suggest that radiation-induced change of the Josephson junction charging energy could significantly affect the current-voltage characteristics of a Cooper-pair insulator, and that a transition to a metallic state is possible, due to radiation-induced disruption of the fine-tuned granular structure. The breaking of Cooper pairs, caused by incident and displaced ions, can also destroy the conditions for this specific insulating state to exist.",
title = "Radiation Effects in Cooper Pair Insulating Thin Films",
pages = "1165-1168",
url = "https://hdl.handle.net/21.15107/rcub_vinar_7009"
}

Lazarević, Đ. R., Dolicanin, E., Iricanin, B., Vujisić, M. Lj.,& Stanković, K.. (2012). Radiation Effects in Cooper Pair Insulating Thin Films. , 1165-1168.
https://hdl.handle.net/21.15107/rcub_vinar_7009

Lazarević ĐR, Dolicanin E, Iricanin B, Vujisić ML, Stanković K. Radiation Effects in Cooper Pair Insulating Thin Films. 2012;:1165-1168.
https://hdl.handle.net/21.15107/rcub_vinar_7009 .

Lazarević, Đorđe R., Dolicanin, Edin, Iricanin, Bratislav, Vujisić, Miloš Lj., Stanković, Koviljka, "Radiation Effects in Cooper Pair Insulating Thin Films" (2012):1165-1168,
https://hdl.handle.net/21.15107/rcub_vinar_7009 .

TY  - JOUR
AU  - Stanković, Koviljka
AU  - Vujisić, Miloš Lj.
AU  - Dolicanin, Edin
PY  - 2009
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3251
AB  - The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.
T2  - Nuclear technology and radiation protection
T1  - Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation
VL  - 24
IS  - 2
SP  - 132
EP  - 137
DO  - 10.2298/NTRP0902132S
ER  - 

@article{
author = "Stanković, Koviljka and Vujisić, Miloš Lj. and Dolicanin, Edin",
year = "2009",
abstract = "The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.",
journal = "Nuclear technology and radiation protection",
title = "Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation",
volume = "24",
number = "2",
pages = "132-137",
doi = "10.2298/NTRP0902132S"
}

Stanković, K., Vujisić, M. Lj.,& Dolicanin, E.. (2009). Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation. in Nuclear technology and radiation protection, 24(2), 132-137.
https://doi.org/10.2298/NTRP0902132S

Stanković K, Vujisić ML, Dolicanin E. Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation. in Nuclear technology and radiation protection. 2009;24(2):132-137.
doi:10.2298/NTRP0902132S .

Stanković, Koviljka, Vujisić, Miloš Lj., Dolicanin, Edin, "Reliability of Semiconductor and Gas-Filled Diodes for Over-Voltage Protection Exposed to Ionizing Radiation" in Nuclear technology and radiation protection, 24, no. 2 (2009):132-137,
https://doi.org/10.2298/NTRP0902132S . .