TY  - JOUR
AU  - Jelenkovic, Emil V.
AU  - Kovačević, Milan S.
AU  - Stupar, Dragan Z.
AU  - Bajic, Jovan S.
AU  - Slankamenac, Miloš P.
AU  - Kovačević, Milojko
AU  - To, Suet
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5695
AB  - N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.
T2  - Measurement Science and Technology
T1  - N-channel polysilicon thin film transistors as gamma-ray detectors
VL  - 24
IS  - 10
DO  - 10.1088/0957-0233/24/10/105103
ER  - 

@article{
author = "Jelenkovic, Emil V. and Kovačević, Milan S. and Stupar, Dragan Z. and Bajic, Jovan S. and Slankamenac, Miloš P. and Kovačević, Milojko and To, Suet",
year = "2013",
abstract = "N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.",
journal = "Measurement Science and Technology",
title = "N-channel polysilicon thin film transistors as gamma-ray detectors",
volume = "24",
number = "10",
doi = "10.1088/0957-0233/24/10/105103"
}

Jelenkovic, E. V., Kovačević, M. S., Stupar, D. Z., Bajic, J. S., Slankamenac, M. P., Kovačević, M.,& To, S.. (2013). N-channel polysilicon thin film transistors as gamma-ray detectors. in Measurement Science and Technology, 24(10).
https://doi.org/10.1088/0957-0233/24/10/105103

Jelenkovic EV, Kovačević MS, Stupar DZ, Bajic JS, Slankamenac MP, Kovačević M, To S. N-channel polysilicon thin film transistors as gamma-ray detectors. in Measurement Science and Technology. 2013;24(10).
doi:10.1088/0957-0233/24/10/105103 .

Jelenkovic, Emil V., Kovačević, Milan S., Stupar, Dragan Z., Bajic, Jovan S., Slankamenac, Miloš P., Kovačević, Milojko, To, Suet, "N-channel polysilicon thin film transistors as gamma-ray detectors" in Measurement Science and Technology, 24, no. 10 (2013),
https://doi.org/10.1088/0957-0233/24/10/105103 . .