Nano-structured TiN thin films deposited by single ion beam reactive sputtering
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Аутори
Bogdanov, ŽarkoPopovic, N.
Zlatanovic, M.
Goncić, Bratislav
Rakočević, Zlatko Lj.
Zec, Slavica
Конференцијски прилог
Метаподаци
Приказ свих података о документуАпстракт
The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N-2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (V-acc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I-220/d), lattice spacing (d(220)) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with V-acc, nearly constant (220) peak broadening with the increase of N-2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms... that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.
Кључне речи:
ion beam reactive sputtering / Nanostructured materials / TiN thin films / X-ray / diffractionИзвор:
Materials Science Forum, 2007, 555, 303-+Финансирање / пројекти:
Напомена:
- Research Trends in Contemporary Materials Science, 8th Conference of the Yugoslav-Materials-Research-Society (Yu-MRS), Sep 04-08, 2006, Herceg Novi, Montenegro
Колекције
Институција/група
VinčaTY - CONF AU - Bogdanov, Žarko AU - Popovic, N. AU - Zlatanovic, M. AU - Goncić, Bratislav AU - Rakočević, Zlatko Lj. AU - Zec, Slavica PY - 2007 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6692 AB - The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N-2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (V-acc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I-220/d), lattice spacing (d(220)) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with V-acc, nearly constant (220) peak broadening with the increase of N-2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed. C3 - Materials Science Forum T1 - Nano-structured TiN thin films deposited by single ion beam reactive sputtering VL - 555 SP - 303 EP - + UR - https://hdl.handle.net/21.15107/rcub_vinar_6692 ER -
@conference{ author = "Bogdanov, Žarko and Popovic, N. and Zlatanovic, M. and Goncić, Bratislav and Rakočević, Zlatko Lj. and Zec, Slavica", year = "2007", abstract = "The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N-2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (V-acc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I-220/d), lattice spacing (d(220)) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with V-acc, nearly constant (220) peak broadening with the increase of N-2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.", journal = "Materials Science Forum", title = "Nano-structured TiN thin films deposited by single ion beam reactive sputtering", volume = "555", pages = "303-+", url = "https://hdl.handle.net/21.15107/rcub_vinar_6692" }
Bogdanov, Ž., Popovic, N., Zlatanovic, M., Goncić, B., Rakočević, Z. Lj.,& Zec, S.. (2007). Nano-structured TiN thin films deposited by single ion beam reactive sputtering. in Materials Science Forum, 555, 303-+. https://hdl.handle.net/21.15107/rcub_vinar_6692
Bogdanov Ž, Popovic N, Zlatanovic M, Goncić B, Rakočević ZL, Zec S. Nano-structured TiN thin films deposited by single ion beam reactive sputtering. in Materials Science Forum. 2007;555:303-+. https://hdl.handle.net/21.15107/rcub_vinar_6692 .
Bogdanov, Žarko, Popovic, N., Zlatanovic, M., Goncić, Bratislav, Rakočević, Zlatko Lj., Zec, Slavica, "Nano-structured TiN thin films deposited by single ion beam reactive sputtering" in Materials Science Forum, 555 (2007):303-+, https://hdl.handle.net/21.15107/rcub_vinar_6692 .