Analysis of SiO2 thin film deposited by reactive sputtering
Само за регистроване кориснике
2006
Аутори
Radović, IvanSerruys, Y.
Limoge, Y.
Jaoul, O.
Romčević, Nebojša Ž.
Poissonnet, S.
Bibić, Nataša M.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
SiO2 layers were deposited by reactive d.c ion sputtering (using 1 keV Ar+ ion gun) from a high purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was 4.7-10(-9) mbar, and the substrate temperature was held at 550 degrees C. The argon partial pressure during ion gun operation was 1-10(-3) mbar. Structural characterization of the films was performed by Rutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-ray diffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient for the deposition of silica at an oxygen partial pressure of 2-10(-4) mbar and an electrical current on the target of 5.5mA.
Кључне речи:
electron microprobe analysis / Raman spectroscopy / RBS analysis / reactive sputtering / SiO2 / thin film / XRD analysisИзвор:
Materials Science Forum, 2006, 518, 149-154Напомена:
- Recent Developments in Advanced Materials and Processes, 7th Conference of the Yugoslav-Materials-Research-Society (Yu-MRS), Sep 12-16, 2005, Herceg Novi, Montenegro
Колекције
Институција/група
VinčaTY - JOUR AU - Radović, Ivan AU - Serruys, Y. AU - Limoge, Y. AU - Jaoul, O. AU - Romčević, Nebojša Ž. AU - Poissonnet, S. AU - Bibić, Nataša M. PY - 2006 UR - https://vinar.vin.bg.ac.rs/handle/123456789/6599 AB - SiO2 layers were deposited by reactive d.c ion sputtering (using 1 keV Ar+ ion gun) from a high purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was 4.7-10(-9) mbar, and the substrate temperature was held at 550 degrees C. The argon partial pressure during ion gun operation was 1-10(-3) mbar. Structural characterization of the films was performed by Rutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-ray diffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient for the deposition of silica at an oxygen partial pressure of 2-10(-4) mbar and an electrical current on the target of 5.5mA. T2 - Materials Science Forum T1 - Analysis of SiO2 thin film deposited by reactive sputtering VL - 518 SP - 149 EP - 154 DO - 10.4028/www.scientific.net/MSF.518.149 ER -
@article{ author = "Radović, Ivan and Serruys, Y. and Limoge, Y. and Jaoul, O. and Romčević, Nebojša Ž. and Poissonnet, S. and Bibić, Nataša M.", year = "2006", abstract = "SiO2 layers were deposited by reactive d.c ion sputtering (using 1 keV Ar+ ion gun) from a high purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was 4.7-10(-9) mbar, and the substrate temperature was held at 550 degrees C. The argon partial pressure during ion gun operation was 1-10(-3) mbar. Structural characterization of the films was performed by Rutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-ray diffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient for the deposition of silica at an oxygen partial pressure of 2-10(-4) mbar and an electrical current on the target of 5.5mA.", journal = "Materials Science Forum", title = "Analysis of SiO2 thin film deposited by reactive sputtering", volume = "518", pages = "149-154", doi = "10.4028/www.scientific.net/MSF.518.149" }
Radović, I., Serruys, Y., Limoge, Y., Jaoul, O., Romčević, N. Ž., Poissonnet, S.,& Bibić, N. M.. (2006). Analysis of SiO2 thin film deposited by reactive sputtering. in Materials Science Forum, 518, 149-154. https://doi.org/10.4028/www.scientific.net/MSF.518.149
Radović I, Serruys Y, Limoge Y, Jaoul O, Romčević NŽ, Poissonnet S, Bibić NM. Analysis of SiO2 thin film deposited by reactive sputtering. in Materials Science Forum. 2006;518:149-154. doi:10.4028/www.scientific.net/MSF.518.149 .
Radović, Ivan, Serruys, Y., Limoge, Y., Jaoul, O., Romčević, Nebojša Ž., Poissonnet, S., Bibić, Nataša M., "Analysis of SiO2 thin film deposited by reactive sputtering" in Materials Science Forum, 518 (2006):149-154, https://doi.org/10.4028/www.scientific.net/MSF.518.149 . .