Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing
Апстракт
The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 degrees C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 degrees C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 degrees C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 degrees C. ...In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 degrees C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model. (C) 2014 Elsevier B. V. All rights reserved.
Кључне речи:
Cobalt / Phase transitions / Silicides / RBS / XRD / TEMИзвор:
Applied Surface Science, 2014, 295, 158-163Финансирање / пројекти:
- Функционални, функционализовани и усавршени нано материјали (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45005)
- Deutsche Forschungsgemeinschaft
DOI: 10.1016/j.apsusc.2014.01.020
ISSN: 0169-4332; 1873-5584
WoS: 000331614300023
Scopus: 2-s2.0-84894104665
Колекције
Институција/група
VinčaTY - JOUR AU - Novaković, Mirjana M. AU - Popović, Maja AU - Zhang, Kun AU - Lieb, K. P. AU - Bibić, Nataša M. PY - 2014 UR - https://vinar.vin.bg.ac.rs/handle/123456789/5890 AB - The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 degrees C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 degrees C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 degrees C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 degrees C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 degrees C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model. (C) 2014 Elsevier B. V. All rights reserved. T2 - Applied Surface Science T1 - Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing VL - 295 SP - 158 EP - 163 DO - 10.1016/j.apsusc.2014.01.020 ER -
@article{ author = "Novaković, Mirjana M. and Popović, Maja and Zhang, Kun and Lieb, K. P. and Bibić, Nataša M.", year = "2014", abstract = "The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 degrees C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 degrees C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 degrees C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 degrees C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 degrees C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model. (C) 2014 Elsevier B. V. All rights reserved.", journal = "Applied Surface Science", title = "Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing", volume = "295", pages = "158-163", doi = "10.1016/j.apsusc.2014.01.020" }
Novaković, M. M., Popović, M., Zhang, K., Lieb, K. P.,& Bibić, N. M.. (2014). Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing. in Applied Surface Science, 295, 158-163. https://doi.org/10.1016/j.apsusc.2014.01.020
Novaković MM, Popović M, Zhang K, Lieb KP, Bibić NM. Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing. in Applied Surface Science. 2014;295:158-163. doi:10.1016/j.apsusc.2014.01.020 .
Novaković, Mirjana M., Popović, Maja, Zhang, Kun, Lieb, K. P., Bibić, Nataša M., "Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing" in Applied Surface Science, 295 (2014):158-163, https://doi.org/10.1016/j.apsusc.2014.01.020 . .