Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers
Аутори
Bibić, Nataša M.Milinović, Velimir
Milosavljević, Momir
Schrempel, F.
Šiljegović, Milorad
Lieb, K. P.
Чланак у часопису
Метаподаци
Приказ свих података о документуАпстракт
Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.
Кључне речи:
Amorphous semi-conductors / ion beam mixing / RBS / SEM / TEMИзвор:
Journal of Microscopy, Oxford, 2008, 232, 3, 539-541Финансирање / пројекти:
- Deutsche Forschungsgemeinschaft, Ministry of Science of the Republic of Serbia [141013]
DOI: 10.1111/j.1365-2818.2008.02143.x
ISSN: 0022-2720
PubMed: 19094037
WoS: 000261253200023
Scopus: 2-s2.0-57449090258
Колекције
Институција/група
VinčaTY - JOUR AU - Bibić, Nataša M. AU - Milinović, Velimir AU - Milosavljević, Momir AU - Schrempel, F. AU - Šiljegović, Milorad AU - Lieb, K. P. PY - 2008 UR - https://vinar.vin.bg.ac.rs/handle/123456789/3575 AB - Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed. T2 - Journal of Microscopy, Oxford T1 - Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers VL - 232 IS - 3 SP - 539 EP - 541 DO - 10.1111/j.1365-2818.2008.02143.x ER -
@article{ author = "Bibić, Nataša M. and Milinović, Velimir and Milosavljević, Momir and Schrempel, F. and Šiljegović, Milorad and Lieb, K. P.", year = "2008", abstract = "Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Arions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.", journal = "Journal of Microscopy, Oxford", title = "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers", volume = "232", number = "3", pages = "539-541", doi = "10.1111/j.1365-2818.2008.02143.x" }
Bibić, N. M., Milinović, V., Milosavljević, M., Schrempel, F., Šiljegović, M.,& Lieb, K. P.. (2008). Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers. in Journal of Microscopy, Oxford, 232(3), 539-541. https://doi.org/10.1111/j.1365-2818.2008.02143.x
Bibić NM, Milinović V, Milosavljević M, Schrempel F, Šiljegović M, Lieb KP. Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers. in Journal of Microscopy, Oxford. 2008;232(3):539-541. doi:10.1111/j.1365-2818.2008.02143.x .
Bibić, Nataša M., Milinović, Velimir, Milosavljević, Momir, Schrempel, F., Šiljegović, Milorad, Lieb, K. P., "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers" in Journal of Microscopy, Oxford, 232, no. 3 (2008):539-541, https://doi.org/10.1111/j.1365-2818.2008.02143.x . .