Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates
Апстракт
Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics.
Извор:
Applied Physics Letters, 2007, 90, 5
DOI: 10.1063/1.2432952
ISSN: 0003-6951
WoS: 000243977300021
Scopus: 2-s2.0-33846949688
Колекције
Институција/група
VinčaTY - JOUR AU - Bibić, Nataša M. AU - Milinović, Velimir AU - Lieb, K. P. AU - Milosavljević, Momir AU - Schrempel, F. PY - 2007 UR - https://vinar.vin.bg.ac.rs/handle/123456789/3150 AB - Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics. T2 - Applied Physics Letters T1 - Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates VL - 90 IS - 5 DO - 10.1063/1.2432952 ER -
@article{ author = "Bibić, Nataša M. and Milinović, Velimir and Lieb, K. P. and Milosavljević, Momir and Schrempel, F.", year = "2007", abstract = "Ion-beam mixing of Fe/Si bilayers, induced at room temperature by 100 keV Ar-40(+), 180 keV Kr-86(+), and 250 keV Xe-132(+) ions, was investigated. The study focuses on the influence of the preamorphization of the Si(100) substrates by 1.0 keV Ar-ion irradiation. Rutherford backscattering spectroscopy as well as scanning and transmission electron microscopies were applied for structural characterization. The mixing rate across the preamorphized Fe/Si interface was, on average, by 76% higher than that of crystalline Si. (c) 2007 American Institute of Physics.", journal = "Applied Physics Letters", title = "Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates", volume = "90", number = "5", doi = "10.1063/1.2432952" }
Bibić, N. M., Milinović, V., Lieb, K. P., Milosavljević, M.,& Schrempel, F.. (2007). Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates. in Applied Physics Letters, 90(5). https://doi.org/10.1063/1.2432952
Bibić NM, Milinović V, Lieb KP, Milosavljević M, Schrempel F. Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates. in Applied Physics Letters. 2007;90(5). doi:10.1063/1.2432952 .
Bibić, Nataša M., Milinović, Velimir, Lieb, K. P., Milosavljević, Momir, Schrempel, F., "Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates" in Applied Physics Letters, 90, no. 5 (2007), https://doi.org/10.1063/1.2432952 . .