Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies
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In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.
Кључне речи:
non-volatile memory / radiation effect / resistive RAM / ferroelectric RAM / magneto-resistive RAM / phase change memoryИзвор:
Nuclear technology and radiation protection, 2017, 32, 4, 381-392Финансирање / пројекти:
- Физички и функционални ефекти интеракције зрачења са електротехничким и биолошким системима (RS-171007)
DOI: 10.2298/NTRP1704381F
ISSN: 1451-3994
WoS: 000423779500011
Scopus: 2-s2.0-85041121133
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Институција/група
VinčaTY - JOUR AU - Fetahović, Irfan S. AU - Dolićanin, Edin C. AU - Lazarević, Đorđe R. AU - Lončar, Boris B. PY - 2017 UR - https://vinar.vin.bg.ac.rs/handle/123456789/1938 AB - In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. T2 - Nuclear technology and radiation protection T1 - Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies VL - 32 IS - 4 SP - 381 EP - 392 DO - 10.2298/NTRP1704381F ER -
@article{ author = "Fetahović, Irfan S. and Dolićanin, Edin C. and Lazarević, Đorđe R. and Lončar, Boris B.", year = "2017", abstract = "In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.", journal = "Nuclear technology and radiation protection", title = "Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies", volume = "32", number = "4", pages = "381-392", doi = "10.2298/NTRP1704381F" }
Fetahović, I. S., Dolićanin, E. C., Lazarević, Đ. R.,& Lončar, B. B.. (2017). Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies. in Nuclear technology and radiation protection, 32(4), 381-392. https://doi.org/10.2298/NTRP1704381F
Fetahović IS, Dolićanin EC, Lazarević ĐR, Lončar BB. Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies. in Nuclear technology and radiation protection. 2017;32(4):381-392. doi:10.2298/NTRP1704381F .
Fetahović, Irfan S., Dolićanin, Edin C., Lazarević, Đorđe R., Lončar, Boris B., "Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies" in Nuclear technology and radiation protection, 32, no. 4 (2017):381-392, https://doi.org/10.2298/NTRP1704381F . .